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H9HCNNN4KMMLHR 4Gb DRAM Memory Chip , LPDDR4 BGA200 Computer Ram Chip Storage

Good quality Laptop CPU Processors for sales
Good supplier and good quality. Hope we can cooperate next time!

—— Samual-Delke Technology

all the parts are good. thank you.

—— Пантелеев Валера

the parts 100% new ! Super !

—— 정훈 공-Kong

the CPU, CHIPSET are good qulity and good price.

—— Henry Tan

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H9HCNNN4KMMLHR 4Gb DRAM Memory Chip , LPDDR4 BGA200 Computer Ram Chip Storage

China H9HCNNN4KMMLHR 4Gb  DRAM Memory Chip ,  LPDDR4  BGA200  Computer Ram Chip  Storage supplier

Large Image :  H9HCNNN4KMMLHR 4Gb DRAM Memory Chip , LPDDR4 BGA200 Computer Ram Chip Storage

Product Details:

Certification: Original Parts
Model Number: H9HCNNN4KMMLHR

Payment & Shipping Terms:

Minimum Order Quantity: 1 package
Price: Negotiation
Packaging Details: 10cm X 10cm X 5cm
Delivery Time: 3-5 work days
Payment Terms: T/T, PayPal, Western Union, Escrow and others
Supply Ability: 6000pcs per month
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Detailed Product Description
Item Number: H9HCNNN4KMMLHR Package: BGA200
Org.: X16 Density: 4GB
Vol:: 1.8V-1.1V-0.6V Speed: L/M
High Light:

dynamic random access memory

,

dram computer chip

DRAM Memory Chip DRAM Memory Chip H9HCNNN4KMMLHR 4Gb LPDDR4 BGA200 Memory Chip Storage

 

 

Features:

VDD1 = 1.8V (1.7V to 1.95V)
· VDD2 and VDDCA = 1.1V (1.06V to 1.17V)
· VDDQ = 0.6V (0.57V to 0.65V)
· VSSQ terminated DQ signals (DQ, DQS_t, DQS_c, DMI)
· Single data rate architecture for command and address;
  - all control and address latched at rising edge of the clock
· Double data rate architecture for data Bus;
  - two data accesses per clock cycle
· Differential clock inputs (CK_t, CK_c)
· Bi-directional differential data strobe (DQS_t, DQS_c)
  - Source synchronous data transaction aligned to bi-directional differential data strobe (DQS_t, DQS_c)
· DMI pin support for write data masking and DBIdc functionality
· Programmable RL (Read Latency) and WL (Write Latency)
· Burst length: 16 (default), 32 and On-the-fly
  - On the fly mode is enabled by MRS
· Auto refresh and self refresh supported
· All bank auto refresh and directed per bank auto refresh supported
· Auto TCSR (Temperature Compensated Self Refresh)
· PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask
· Background ZQ Calibration
Product Specifications
Part No.

 COMPARE

Den.

 

Org.

 

Vol

 

Speed

 

Power

 

PKG

 

Product Status

 

H9HCNNN4KMMLHR 4Gb x16 1.8V-1.1V-0.6V L / M Low Power 200 Mass production
H9HCNNN4KUMLHR 4Gb x16 1.8V-1.1V-1.1V L / M Low Power 200 Mass production
H9HCNNN8KUMLHR 8Gb x16 1.8V-1.1V-1.1V L / M Low Power 200 Mass production
H9HCNNNBKMMLHR 16Gb x16 1.8V-1.1V-0.6V M / E Low Power 200 Mass production
H9HCNNNBKUMLHR 16Gb x16 1.8V-1.1V-1.1V M / E Low Power 200 Mass production
H9HCNNNBPUMLHR 16Gb x16 1.8V-1.1V-1.1V L / M Low Power 200 Mass production
H9HCNNNCPMMLHR 32Gb x16 1.8V-1.1V-0.6V M / E Low Power 200 Mass production
H9HCNNNCPUMLHR 32Gb x16 1.8V-1.1V-1.1V M / E Low Power 200 Mass production

 

Speed
Part Number Speed
L 3200Mbps
M 3733Mbps

 

Contact Details
Beijing Silk Road Enterprise Management Services Co.,LTD

Contact Person: Karen.

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