Integrity management, solidarity and mutual help, innovation and change, pragmatism and efficiency.

Home
Products
About Us
Factory Tour
Quality Control
Contact Us
Request A Quote
Home ProductsDRAM Memory Chip

H9HCNNNBUUMLHR DRAM Memory Chip ,16gb Memory Ram For Personal Computer LPDDR4 BGA200

Good quality Laptop CPU Processors for sales
Good supplier and good quality. Hope we can cooperate next time!

—— Samual-Delke Technology

all the parts are good. thank you.

—— Пантелеев Валера

the parts 100% new ! Super !

—— 정훈 공-Kong

the CPU, CHIPSET are good qulity and good price.

—— Henry Tan

I'm Online Chat Now

H9HCNNNBUUMLHR DRAM Memory Chip ,16gb Memory Ram For Personal Computer LPDDR4 BGA200

China H9HCNNNBUUMLHR DRAM Memory Chip ,16gb Memory Ram For Personal Computer LPDDR4  BGA200 supplier

Large Image :  H9HCNNNBUUMLHR DRAM Memory Chip ,16gb Memory Ram For Personal Computer LPDDR4 BGA200

Product Details:

Certification: Original Parts
Model Number: H9HCNNNBUUMLHR

Payment & Shipping Terms:

Minimum Order Quantity: 1 package
Price: Negotiation
Packaging Details: 10cm X 10cm X 5cm
Delivery Time: 3-5 work days
Payment Terms: T/T, PayPal, Western Union, Escrow and others
Supply Ability: 6000pcs per month
Contact Now
Detailed Product Description
Item Number: H9HCNNNBUUMLHR Package: BGA200
Org.: X16 Density: 16GB
Vol:: 1.8V-1.1V-1.1V Speed: L
High Light:

dynamic random access memory

,

ram memory ic

DRAM Memory Chip DRAM Memory Chip H9HCNNNBUUMLHR 16Gb LPDDR4 BGA200 Memory Chip Storage

 

Specifications

H9HCNNNBUUMLHR

Features

· VDD1 = 1.8V (1.7V to 1.95V)
· VDD2, VDDCA and VDDQ = 1.1V (1.06 to 1.17)
· VSSQ terminated DQ signals (DQ, DQS_t, DQS_c, DMI)
· Single data rate architecture for command and address;
- all control and address latched at rising edge of the clock
· Double data rate architecture for data Bus;
- two data accesses per clock cycle
· Differential clock inputs (CK_t, CK_c)
· Bi-directional differential data strobe (DQS_t, DQS_c)
- Source synchronous data transaction aligned to bi-directional differential data strobe (DQS_t, DQS_c)
· DMI pin support for write data masking and DBIdc functionality
· Programmable RL (Read Latency) and WL (Write Latency)
· Burst length: 16 (default), 32 and On-the-fly
- On the fly mode is enabled by MRS
· Auto refresh and self refresh supported
· All bank auto refresh and directed per bank auto refresh supported
· Auto TCSR (Temperature Compensated Self Refresh)
· PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask
· Background ZQ Calibration

 

Product Specifications

 

Part No.

order by COMPARE

Den.

order by hidden

Org.

order by hidden

Vol

order by hidden

Speed

order by hidden

Power

order by hidden

PKG

order by hidden

Product Status

order by hidden

H9HCNNNBUUMLHR 16Gb x16 1.8V-1.1V-1.1V L Low Power 200 Mass production
H9HKNNNBTUMUAR 16Gb x16 1.8V-1.1V-1.1V L Low Power 272 Mass production
H9HKNNNBTUMUBR 16Gb x16 1.8V-1.1V-1.1V L Low Power 366 Mass production
H9HKNNNDGUMUAR 24Gb x16 1.8V-1.1V-1.1V L Low Power 272 Mass production
H9HKNNNDGUMUBR 24Gb x16 1.8V-1.1V-1.1V L / M Low Power 366 Mass production
H9HKNNNCTUMUAR 32Gb x16 1.8V-1.1V-1.1V L Low Power 272 Mass production
H9HKNNNCTUMUBR 32Gb x16 1.8V-1.1V-1.1V L / M Low Power 366 Mass production

 

 

Contact Details
Beijing Silk Road Enterprise Management Services Co.,LTD

Contact Person: Karen.

Send your inquiry directly to us (0 / 3000)