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| Item Numbe: | TC58BYG1S3HBAI6 | Denisty: | 2Gb （256M X 8） |
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| Products Category: | Memory & Flash Memory | Memory Interface: | Parallel |
| Volt.: | 1.7 V ~ 1.95 V | Technology: | FLASH - NAND (TLC) |
| Temp.: | -40°C ~ 85°C（TA） | Package: | 67-VFBGA |
| High Light: | nand type flash memory,flash memory ic chip |
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Flash Memory Chip TC58BYG1S3HBAI6 IC FLASH 2G PARALLEL 67VFBGA
he TC58BYG1S3HBAI6 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BYG1S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
The TC58BYG1S3HBAI6 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally
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Description | Value |
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Architecture | Sectored |
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Block Organization | Symmetrical |
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Cell Type | SLC NAND |
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Density | 2 Gb |
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ECC Support | Yes |
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Interface Type | Serial |
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Maximum Operating Supply Voltage | 1.95 V |
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Minimum Operating Supply Voltage | 1.7 V |
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Mounting | Surface Mount |
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Number of Bits per Word | 8 Bit |
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Number of Words | 256 MWords |
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Operating Temperature | -40 to 85 °C |
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Page Size | 2 KB |
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Pin Count | 67 |
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Product Dimensions | 8 x 6.5 x 0.74(Max) |
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Programming Voltage | 1.7 to 1.95 V |
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Screening Level | Industrial |
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Sector Size | 128 x 2048 KB |
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Supplier Package | VFBGA |
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Timing Type | Synchronous |
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Typical Operating Supply Voltage | 1.8000 V |
Feature:
Contact Person: Karen.
