Name: Mt29f2g08abaeah4-It E Ic 2gb Parallel Nand Flash Memory 63vfbga 2.7 V ~ 3.6 V
Brand: Mt29f2g08abaeah4-It E Ic 2gb Parallel Nand Flash Memory 63vfbga 2.7 V ~ 3.6 V
SKU: MT29F2G08ABAEAH4-IT:E
Rating: 4.7 (148 reviews)

Detail Information

Item Numbe:	MT29F2G08ABAEAH4-IT:E	Denisty:	2Gb （256M X 8）
Products Category:	Memory & Flash Memory	Memory Interface:	Parallel
Volt.:	2.7 V ~ 3.6 V	Technology:	FLASH - NAND (TLC)
Temp.:	-40°C ~ 85°C（TA）	Package:	63-VFBGA
High Light:	flash memory ic chip , flash memory controller chip

Product Description

Flash Memory Chip MX30LF1208AA-XKI IC NAND FLASH 512M PARALLEL 63VFBGA

Product Technical Specifications

EU RoHS	Compliant
ECCN (US)	3A991.b.1.a
Cell Type	SLC NAND
Chip Density (bit)	2G
Architecture	Sectored
Boot Block	Yes
Block Organization	Symmetrical
Address Bus Width (bit)	29
Sector Size	128Kbyte x 2048
Page Size	2Kbyte
Number of Bits/Word (bit)	8
Number of Words	256M
Programmability	Yes
Timing Type	Asynchronous
Maximum Erase Time (s)	0.003/Block
Maximum Programming Time (ms)	0.6/Page
Interface Type	Parallel
Minimum Operating Supply Voltage (V)	2.7
Typical Operating Supply Voltage (V)	3.3
Maximum Operating Supply Voltage (V)	3.6
Operating Current (mA)	35
Program Current (mA)	35
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	85
Supplier Temperature Grade	Industrial
Command Compatible	No
ECC Support	Yes
Erase Suspend/Resume Modes Support	No
Simultaneous Read/Write Support	No
Support of Common Flash Interface	No
Support of Page Mode	Yes
Minimum Endurance (Cycles)	100000(Typ)
Packaging	Tray
Supplier Package	VFBGA
Standard Package Name	BGA
Pin Count	63
Mounting	Surface Mount
Package Height	1(Max) - 0.25(Min)
Package Length	11
Package Width	9
PCB changed	63
Lead Shape	Ball

Feature:

	Description	Value
	Architecture	Sectored
	Block Organization	Symmetrical
	Boot Block	Yes
	Cell Type	SLC NAND
	Command Compatible	No
	Density	2 Gb
	ECC Support	Yes
	Erase Suspend/Resume Modes Support	No
	Interface Type	Parallel
	Lead Finish	Tin\|Silver\|Copper
	Max Processing Temp	260
	Maximum Erase Time	0.003/Block s
	Maximum Operating Current	35 mA
	Maximum Operating Supply Voltage	3.6 V
	Maximum Programming Time	0.6/Page ms
	Minimum Operating Supply Voltage	2.7 V
	Mounting	Surface Mount
	Number of Bits per Word	8 Bit
	Number of Words	256 MWords
	Operating Temperature	-40 to 85 °C
	Page Size	2 KB
	Pin Count	63
	Product Dimensions	11 x 9 x 0.75(Max)
	Program Current	35 mA
	Programming Voltage	2.7 to 3.6 V
	Screening Level	Automotive
	Sector Size	128 x 2048 KB
	Simultaneous Read/Write Support	No
	Supplier Package	VFBGA
	Support of Page Mode	No
	Timing Type	Asynchronous
	Typical Operating Supply Voltage	3.3000 V

Tag:

Certification:	Original Parts
Model Number:	MT29F2G08ABAEAH4-IT:E

Minimum Order Quantity:	1260PCS/BOX
Price:	Negotiation
Packaging Details:	10cm X 10cm X 5cm
Delivery Time:	3-5 work days
Payment Terms:	T/T, PayPal, Western Union, Escrow and others
Supply Ability:	10k per month

Mt29f2g08abaeah4-It E Ic 2gb Parallel Nand Flash Memory 63vfbga 2.7 V ~ 3.6 V

flash memory ic chip

flash memory controller chip

Product Technical Specifications

flash memory ic chip,

nand type flash memory,

flash memory controller chip

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