Mt29f2g08abaeah4-It E Ic 2gb Parallel Nand Flash Memory 63vfbga 2.7 V ~ 3.6 V

Basic Information
Certification: Original Parts
Model Number: MT29F2G08ABAEAH4-IT:E
Minimum Order Quantity: 1260PCS/BOX
Price: Negotiation
Packaging Details: 10cm X 10cm X 5cm
Delivery Time: 3-5 work days
Payment Terms: T/T, PayPal, Western Union, Escrow and others
Supply Ability: 10k per month
Detail Information
Item Numbe: MT29F2G08ABAEAH4-IT:E Denisty: 2Gb (256M X 8)
Products Category: Memory & Flash Memory Memory Interface: Parallel
Volt.: 2.7 V ~ 3.6 V Technology: FLASH - NAND (TLC)
Temp.: -40°C ~ 85°C(TA) Package: 63-VFBGA
High Light:

flash memory ic chip


flash memory controller chip

Product Description



Product Technical Specifications

EU RoHS Compliant
ECCN (US) 3A991.b.1.a
Cell Type SLC NAND
Chip Density (bit) 2G
Architecture Sectored
Boot Block Yes
Block Organization Symmetrical
Address Bus Width (bit) 29
Sector Size 128Kbyte x 2048
Page Size 2Kbyte
Number of Bits/Word (bit) 8
Number of Words 256M
Programmability Yes
Timing Type Asynchronous
Maximum Erase Time (s) 0.003/Block
Maximum Programming Time (ms) 0.6/Page
Interface Type Parallel
Minimum Operating Supply Voltage (V) 2.7
Typical Operating Supply Voltage (V) 3.3
Maximum Operating Supply Voltage (V) 3.6
Operating Current (mA) 35
Program Current (mA) 35
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Industrial
Command Compatible No
ECC Support Yes
Erase Suspend/Resume Modes Support No
Simultaneous Read/Write Support No
Support of Common Flash Interface No
Support of Page Mode Yes
Minimum Endurance (Cycles) 100000(Typ)
Packaging Tray
Supplier Package VFBGA
Standard Package Name BGA
Pin Count 63
Mounting Surface Mount
Package Height 1(Max) - 0.25(Min)
Package Length 11
Package Width 9
PCB changed 63
Lead Shape Ball








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