|Item Numbe:||W9725G6JB25I-ND||Products Category:||Memory & Flash Memory|
|Storage Capacity:||256Mb （16M X 16）||Frequency:||200MHz|
|VOLT:||1.7 V ~ 1.9 V||Technology:||SDRAM - DDR2|
|Temp.:||-40°C ~ 95°C（TC）||Package:||BGA96|
nand type flash memory,
flash memory controller chip
Flash Memory Chip W9725G6JB25I-ND,IC DRAM 256M PARALLEL 84WBGA
The W9725G6JB is a 256M bits DDR2 SDRAM, organized as 4,194,304 words x 4 banks x 16 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for various applications. W9725G6JB is sorted into the following speed grades: -18, -25, 25I, 25A, 25K and -3. The -18 grade parts is compliant to the DDR2-1066 (7-7-7) specification. The -25/25I/25A/25K grade parts are compliant to the DDR2-800 (5-5-5) or DDR2-800 (6-6-6) specification (the 25I industrial grade parts which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -3 grade parts is compliant to the DDR2-667 (5-5-5) specification.
The automotive grade parts temperature, if offered, has two simultaneous requirements: ambient temperature (TA) surrounding the device cannot be less than -40°C or greater than +95°C (for 25A), +105°C (for 25K), and the case temperature (TCASE) cannot be less than -40°C or greater than +95°C (for 25A), +105°C (for 25K). JEDEC specifications require the refresh rate to double when TCASE exceeds +85°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the input/output impedance must be derated when TCASE is < 0°C or > +85°C.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CLK rising and NOT CLK falling). All I/Os are synchronized with a single ended DQS or differential DQS- NOT DQS pair in a source synchronous fashion.