Integrity management, solidarity and mutual help, innovation and change, pragmatism and efficiency.

Home
Products
About Us
Factory Tour
Quality Control
Contact Us
Request A Quote
Home ProductsIC Memory Chip

SRAM IS61WV25616BLL-10TLI Electronic Integrated Circuits Asynchronous 4Mb Parallel 10ns TSOP44

Good quality Laptop CPU Processors for sales
Good supplier and good quality. Hope we can cooperate next time!

—— Samual-Delke Technology

all the parts are good. thank you.

—— Пантелеев Валера

the parts 100% new ! Super !

—— 정훈 공-Kong

the CPU, CHIPSET are good qulity and good price.

—— Henry Tan

I'm Online Chat Now

SRAM IS61WV25616BLL-10TLI Electronic Integrated Circuits Asynchronous 4Mb Parallel 10ns TSOP44

China SRAM  IS61WV25616BLL-10TLI Electronic Integrated Circuits Asynchronous 4Mb Parallel 10ns TSOP44 supplier

Large Image :  SRAM IS61WV25616BLL-10TLI Electronic Integrated Circuits Asynchronous 4Mb Parallel 10ns TSOP44

Product Details:

Certification: Original Parts
Model Number: IS61WV25616BLL-10TLI

Payment & Shipping Terms:

Minimum Order Quantity: 1 piece
Price: Negotiation
Packaging Details: 10cm X 10cm X 5cm
Delivery Time: 3-5 work days
Payment Terms: T/T, PayPal, Western Union, Escrow and others
Supply Ability: 500-2000pcs per month
Contact Now
Detailed Product Description
Item NO.: IS61WV25616BLL-10TLI Memory Type: Volatile
Memory Format: SRAM Memory Size: Memory Size
High Light:

integrated circuits ic

,

electronic ic chip

 

IC CHIP SRAM IS61WV25616BLL-10TLI Memory IC Chip - Asynchronous Memory IC 4Mb Parallel 10ns TSOP44

 

 

FEATURES:

 

HIGH SPEED: (IS61/64WV25616ALL/BLL)

• High-speed access time: 8, 10, 20 ns

• Low Active Power: 85 mW (typical)

• Low Standby Power: 7 mW (typical) CMOS standby

LOW POWER: (IS61/64WV25616ALS/BLS)

• High-speed access time: 25, 35, 45 ns

• Low Active Power: 35 mW (typical)

• Low Standby Power: 0.6 mW (typical) CMOS standby

• Single power supply

— VDD 1.65V to 2.2V (IS61WV25616Axx)

— VDD 2.4V to 3.6V (IS61/64WV25616Bxx)

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperature support

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM:

DESCRIPTION

The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx

are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated usingISSI's high- performance CMOS technology. This highly reliable pro- cess coupled with innovative circuit design techniques,

yields high-performance and low power consumption de- vices.

 

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

 

Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

 

The IS61WV25616Axx/Bxx and IS64WV25616Bxx are packaged in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (6mm x 8mm).

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 3.3V + 5%

 

Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 V
VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA 0.4 V
VIH Input HIGH Voltage   2 VDD + 0.3 V
VIL Input LOW Voltage(1)   –0.3 0.8 V
ILI Input Leakage GND £ VIN £ VDD –1 1 µA
ILO Output Leakage GND £ VOUT £ VDD, Outputs Disabled –1 1 µA

Note:

1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.

VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.

 

 

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 2.4V-3.6V

 

Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –1.0 mA 1.8 V
VOL Output LOW Voltage VDD = Min., IOL = 1.0 mA 0.4 V
VIH Input HIGH Voltage   2.0 VDD + 0.3 V
VIL Input LOW Voltage(1)   –0.3 0.8 V
ILI Input Leakage GND £ VIN £ VDD –1 1 µA
ILO Output Leakage GND £ VOUT £ VDD, Outputs Disabled –1 1 µA

Note:

1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.

VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.

 

 

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 1.65V-2.2V

 

Symbol Parameter Test Conditions VDD Min. Max. Unit
VOH Output HIGH Voltage IOH = -0.1 mA 1.65-2.2V 1.4 V
VOL Output LOW Voltage IOL = 0.1 mA 1.65-2.2V 0.2 V
VIH Input HIGH Voltage   1.65-2.2V 1.4 VDD + 0.2 V
VIL(1) Input LOW Voltage   1.65-2.2V –0.2 0.4 V
ILI Input Leakage GND £ VIN £ VDD –1 1 µA
ILO Output Leakage GND £ VOUT £ VDD, Outputs Disabled –1 1 µA

Note:

1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.

VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.

AC TEST CONDITIONS

 

Parameter Unit Unit Unit
  (2.4V-3.6V) (3.3V +10%) (1.65V-2.2V)
InputPulseLevel 0Vto3V 0Vto3V 0Vto1.8V
Input Rise and Fall Times 1V/ ns 1V/ ns 1V/ ns
InputandOutputTiming andReferenceLevel(VRef) 1.5V 1.5V 0.9V
OutputLoad See Figures 1 and 2 See Figures 1 and 2 See Figures 1 and 2

Contact Details
Beijing Silk Road Enterprise Management Services Co.,LTD

Contact Person: Karen.

Send your inquiry directly to us (0 / 3000)